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Journal Articles

Real-time monitoring of oxidation processes on the Si(001) surface using O$$_{2}$$ gas under 1000 K by synchrotron radiation photoemission spectroscopy

Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden

Surface Science, 566-568(Part.2), p.1124 - 1129, 2004/09

https://doi.org/10.1016/j.susc.2004.06.069
 Times Cited Count：5 Percentile：29.77(Chemistry, Physical)

The Si(001) oxidaion is an important reaction for not only semiconductor technology but also surface science. It is known that the growth mode forming oxide-layers is divided into two regions depending on surface temperature conditions. One is passive oxidation and the other is two dimensional island growth including SiO desorption. Since the oxygen uptake measurements have been measured in many reported studies, Si oxidatuion states related to the growth of oxide-layers have not been clarified yet. In order to measure the time evolution of Si oxidation states depending on the surface temperature, we have performed the real-time photoemission measurements using synchrotron radiation at SUREAC2000 in SPring-8 . We found that the Si$$^{4+}$$ states was formed at the early oxidation stage in the two dimiensional island regions.

Journal Articles

Oxidation of aqueous HF-treated Si(001) surface induced by translational kinetic energy of O$$_{2}$$ at room temperature

Yoshigoe, Akitaka; Teraoka, Yuden

Japanese Journal of Applied Physics, Part 1, 42(9A), p.5749 - 5750, 2003/09

https://doi.org/10.1143/JJAP.42.5749
 Times Cited Count：2 Percentile：10.73(Physics, Applied)

We investigated oxidation reactions induced by the translational kinetic energy of O$$_{2}$$ on an Si(001) surface treated with aqueous hydrofluoric acid (HF) solution by combining synchrotron radiation photoemission spectroscopy with supersonic molecular beam techniques. The oxidation reactions at room temperature did not progress following up to approximately 3600 L exposure of O$$_{2}$$ with incident energy of 0.04 eV. On the other hand, the oxidation states up to the Si$$^{4+}$$ species including the Si$$^{1+}$$, Si$$^{2+}$$ and Si$$^{3+}$$ species were formed when the incident energy was 3.0 eV. The thickness of oxidized layers was estimated to be 0.26 nm at the final oxidation stages. Thus, we concluded that the Si atoms at the top layers were oxidized by the translational kinetic energy of 3.0 eV.

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